Product Summary

The BSS125 is a SIPMOS small-signal transistor.

Parametrics

BSS125 absolute maximum ratings: (1) Drain source voltage VDS: 600V; (2) Drain-gate voltage RGS = 20kΩ VDGR: 600V; (3) Gate source voltageVGS± 14Gate-source peak voltage,aperiodic Vgs: ±20V; (4) Continuous drain currentTA = 35 °C ID: 0.1A; (5) DC drain current, pulsedTA = 25 °C IDpuls: 0.4A; (6) Power dissipationTA = 25 °CPtot: 1W.

Features

BSS125 features: (1)N channel; (2)Enhancement mode; (3)VGS(th) = 1.5, 2.5 V.

Diagrams

BSS125 dimension

BSS119 L6327
BSS119 L6327
Infineon Technologies
MOSFET N-CH 100V 0.17A
Data Sheet
0-1: $0.41
1-10: $0.38
10-100: $0.35
100-250: $0.29
BSS119 L6433
BSS119 L6433
Infineon Technologies
MOSFET SIPMOS Sm-Signal Transistor 100V .17A
Data Sheet
0-1: $0.41
1-10: $0.37
10-100: $0.34
100-250: $0.27
BSS123 L6327
BSS123 L6327
Infineon Technologies
MOSFET N-CH 100V 0.17A
Data Sheet
0-1: $0.21
1-10: $0.15
10-100: $0.09
100-250: $0.06
BSS123LT1G
BSS123LT1G
ON Semiconductor
MOSFET 100V 170mA N-Channel
Data Sheet
0-1: $0.19
1-25: $0.13
25-100: $0.10
100-500: $0.05
BSS123 L6433
BSS123 L6433
Infineon Technologies
MOSFET SIPMOS Sm-Signal Transistor 100V .17A
Data Sheet
0-1: $0.19
1-10: $0.14
10-100: $0.10
100-250: $0.08
BSS123,215
BSS123,215
NXP Semiconductors
MOSFET N-CH TRNCH 100V .15A
Data Sheet
0-1: $0.03
1-25: $0.03
25-100: $0.03
100-250: $0.03