(China (Mainland))
Product Summary
The FGP7N60RUFD is an IGBT. Fairchild Insulated Gate Bipolar Transistors (IGBT) provides low conduction and switching losses.The FGP7N60RUFD is designed for Motor applications where ruggedness is a required feature.
Parametrics
FGP7N60RUFD absolute maximum ratings: (1)VCES Collector-Emitter Voltage: 600V; (2)VGES Gate-Emitter Voltage: ± 20V; (3)TJ Operating Junction Temperature: -55 to +150°C; (4)Tstg Storage Temperature Range: -55 to +150°C; (5)TL Maximum Lead Temp. for solderingPurposes, 1/8 from case for 5 seconds: 300°C; (6)ICM (1)Pulsed Collector Current: 21A; (7)IF Diode Continuous Forward Current @ TC = 100°C: 12A; (8)IFM Diode Maximum Forward Current: 60A; (9)PD Maximum Power Dissipation @ TC = 25°C: 69W.
Features
FGP7N60RUFD features: (1)High speed switching; (2)Low saturation voltage : VCE(sat)= 1.95 V @ IC = 7A; (3)High input impedance; (4)CO-PAK, IGBT with FRD : trr = 50 ns (typ.); (5)Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FGP7N60RUFDTU |
Fairchild Semiconductor |
IGBT Transistors 600V 7A RUF IGBT CO-PAK |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
FGP7N60RUFDTU |
Fairchild Semiconductor |
IGBT Transistors 600V 7A RUF IGBT CO-PAK |
Data Sheet |
Negotiable |
|
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