(China (Mainland))
Product Summary
The FQA13N80 is an 800V N-channel mosfet. The FQA13N80 is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA13N80 is well suited for high efficiency switch mode power supplies.
Parametrics
FQA13N80 absolute maximum ratings: (1)IDM Drain Current - Pulsed (Note 1): 50.4 A; (2)VGSS Gate-Source Voltage: ± 30 V; (3)EAS Single Pulsed Avalanche Energy (Note 2): 1100 mJ; (4)IAR Avalanche Current (Note 1): 12.6 A; (5)EAR Repetitive Avalanche Energy (Note 1): 30 mJ; (6)dv/dt Peak Diode Recovery dv/dt (Note 3): 4.0 V/ns; (7)VDSS Drain-Source Voltage: 800 V; (8)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 °C.
Features
FQA13N80 features: (1)12.6A, 800V, RDS(on)= 0.75Ω @VGS = 10 V; (2)Low gate charge ( typical 68 nC); (3)Low Crss ( typical 30 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQA13N80 |
Fairchild Semiconductor |
MOSFET TO-3P N-CH 600V |
Data Sheet |
Negotiable |
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FQA13N80_F109 |
Fairchild Semiconductor |
MOSFET TO-3P N-CH 600V |
Data Sheet |
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